Atomic Layer Deposition (ALD)

Atomic Layer Deposition System (Thermal), ALD

Features:

1 SUS316 stainless deposition chamber, dual heater design for substrate;

2 high speed ALD diaphragm valves;

3 Up to 12 inch;

4 Substrate heating up to 400℃;

5 Up to 6 precursors and 6 gas lines;

6 Metal sealed pipes, heatable up to 120℃;

7 Heating and Cooling for precursor tanks;

8 Fully automatic process control, manually compatible.